any changing of specification will not be informed individual bcp5401 pnp epitaxial planar transistor h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e 1.base 2.collector 3.emitter absolute maximum ratings (t amb = 2 5 c, unless otherwise specified) o p symbol value unit arameter collector-base voltage v cbo -160 v v v ma w c o collector-emitter voltage v ceo v ebo -5 emitter-base voltage -600 p d i c 1 collector current total power dissipation operating junction and storage temperature t j , t st g +150,-55 ~ +150 -150 electrical characteristics (t amb = 2 5 c ) o p s y m b o l m i n . t y p . m a x . u n i t t e s t c o n d i t i o n s a r a m e t e r c o l l e c t o r - b a s e b r e a k d o w n v o l t a g e i c = - 1 0 0 a , i e = 0 i c = - 1 m a , i b = 0 i e = - 1 0 a , i c = 0 v c b = - 1 2 0 v , i e = 0 v e b = - 5 v , i c = 0 i c = - 1 0 m a , i b = - 1 m a i c v c b = - 1 0 v , f = 1 m h z b v c b o - 1 6 0 v c o l l e c t o r - e m i t t e r b r e a k d o w n v o l t a g e b v c e o b v e b o v v - 5 n a e m i t t e r - b a s e b r e a k d o w n v o l t a g e n a i c b o i e b o v 1 c e ( s a t ) - - - - - - - - - - - - - - - - - - 5 0 0 - 2 0 0 - 5 0 - 5 0 m v m v c o l l e c t o r c u t - o f f c u r r e n t e m i t t e r c u t - o f f c u r r e n t o u t p u t c a p a c i t a n c e - 1 5 0 i c = - 5 0 m a , i b = - 5 m a v c e = - 5 v , i c = - 1 m a v c e = - 5 v , i c = - 1 0 m a v c e = - 5 v , i c = - 5 0 m a v c e = - 1 0 v , i c = - 1 0 m a , f = 1 0 0 m h z 6 0 5 0 v b e ( s a t ) 2 h f e 1 h f e 2 h f e 3 f t - - - - - - - - 5 0 2 4 0 - 1 m h z v b a s e - e m i t t e r v o l t a g e d c c u r r e n t g a i n t r a n s i t i o n f r e q u e n c y v 2 c e ( s a t ) c o l l e c t o r - e m i t t e r s a t u r a t i o n v o l t a g e = - 5 0 m a , i b = - 5 m a c o b v b e ( s a t ) 1 - 6 p f - 1 0 0 - 1 v i c = - 1 0 m a , i b = - 1 m a m a r k i n g : 5 4 x x x x ( x x x x = d a t e c o d e ) 0 1 designed for gereral prupose application requiring high breakdown voltage. 0 1 - j u n - 2 0 0 2 r e v . a p a g e 1 o f 2 1 2 3 features sot-89 r e f . m i n . m a x . r e f . m i n . m a x . a 4 . 4 4 . 6 g 3 . 0 0 r e f . b 4 . 0 5 4 . 2 5 h 1 . 5 0 r e f . c 1 . 5 0 1 . 7 0 i 0 . 4 0 0 . 5 2 d 1 . 3 0 1 . 5 0 j 1 . 4 0 1 . 6 0 e 2 . 4 0 2 . 6 0 k 0 . 3 5 0 . 4 1 f 0 . 8 9 1 . 2 0 l 5 q t y p . m 0 . 7 0 r e f . rohs compliant product
bcp5401 pnp epitaxial planar transistor elektronische bauelemente 01-jun-2002 rev. a page 1 of 2 any changing of specification will not be informed individual http://www.secosgmbh.com c h a r a c t e r i s t i c s c u r v e
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